Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon

Spin Accumulation and Spin Lifetime in p-Type Germanium at Room Temperature

(2012) Satoshi Iba et al.   Applied Physics Express

Effect of spin drift on spin accumulation voltages in highly doped silicon

(2012) Makoto Kameno et al.   APPLIED PHYSICS LETTERS

Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts

(2012) K. Kasahara et al.   JOURNAL OF APPLIED PHYSICS

Silicon spintronics

(2012) Ron Jansen   NATURE MATERIALS

Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel

(2012) Y. Ando et al.   PHYSICAL REVIEW B

Field-Induced Negative Differential Spin Lifetime in Silicon

(2012) Jing Li et al.   PHYSICAL REVIEW LETTERS

Silicon spintronics with ferromagnetic tunnel devices

(2012) R Jansen et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Room-Temperature Electron Spin Transport in a Highly Doped Si Channel

(2011) Toshio Suzuki et al.   Applied Physics Express

Electric-field control of spin accumulation signals in silicon at room temperature

(2011) Y. Ando et al.   APPLIED PHYSICS LETTERS

Silicon spin communication

(2011) Hanan Dery et al.   APPLIED PHYSICS LETTERS

Comparison of spin signals in silicon between nonlocal four-terminal and three-terminal methods

(2011) Tomoyuki Sasaki et al.   APPLIED PHYSICS LETTERS

Source–Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications

(2011) Kohei Hamaya et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature

(2011) Kun-Rok Jeon et al.   PHYSICAL REVIEW B

Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

(2011) S. P. Dash et al.   PHYSICAL REVIEW B

Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts

(2011) C.H. Li et al.   Nature Communications

High-quality epitaxial CoFe/Si(111) heterostructures fabricated by low-temperature molecular beam epitaxy

(2010) Y. Maeda et al.   APPLIED PHYSICS LETTERS

Electrical creation of spin polarization in silicon at room temperature

(2009) Saroj P. Dash et al.   NATURE

Bias-controlled sensitivity of ferromagnet/semiconductor electrical spin detectors

(2009) S. A. Crooker et al.   PHYSICAL REVIEW B

Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor

(2009) M. Tran et al.   PHYSICAL REVIEW LETTERS