4.6 Article

In-situ observation of ⟨110⟩ oriented Ge nanowire growth and associated collector droplet behavior

Journal

APPLIED PHYSICS LETTERS
Volume 99, Issue 14, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3647774

Keywords

drops; elemental semiconductors; evaporation; germanium; nanofabrication; nanowires; scanning electron microscopy; semiconductor growth

Funding

  1. Ministry of Education of the Czech Republic [MSM0021630508, LC06040]
  2. GAAV [KAN400100701]
  3. CEITEC [CZ.1.05/1.1.00/02.0068]
  4. FEI Company

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Using in-situ microscopy, we show that germanium nanowires can be grown by a vapor-liquid-solid process in < 110 > directions both on Ge(100) and Ge(111) substrates if very low supersaturation in the collector droplet is ensured, This can be provided if thermal evaporation is utilized. Such a behavior is also in agreement with earlier chemical vapor deposition experiments, where < 110 > oriented wires were obtained for very small wire diameters only. Our conclusions are supported by in-situ observations of nanowirc kinking towards < 111 > direction occurring more frequently at higher evaporation rates. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3647774]

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