Al1.3Sb3Te material for phase change memory application

Comparing with Ge2Sb2Te5, Al1.3Sb3Te is proved to be a promising candidate for phase-change memory use because of its higher crystallization temperature (similar to 210 degrees C), larger crystallization activation energy (3.32 eV), and better data retention ability (124 degrees C for 10 yr). Furthermore, Al1.3Sb3Te shows fast phase change speed and crystallizes into a uniformly embedded crystal structure. As short as 10 ns width, voltage pulse can realize reversible operations for Al1.3Sb3Te based phase-change memory cell. Moreover, phase-change memory cell based on Al1.3Sb3Te material also has good endurance (similar to 2.5 x 10(4) cycles) and an enough resistance ratio of similar to 10(2). (C) 2011 American Institute of Physics. [doi:10.1063/1.3616146]