Eliminating stacking faults in semi-polar GaN by AlN interlayers

Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11¯01) semipolar GaN

(2011) Z. H. Wu et al.   APPLIED PHYSICS LETTERS

Semipolar single component GaN on planar high index Si(11h) substrates

(2010) Roghaiyeh Ravash et al.   APPLIED PHYSICS LETTERS

Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown onm-Plane GaN

(2009) Alec M. Fischer et al.   Applied Physics Express

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

(2009) Yohei Enya et al.   Applied Physics Express

Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates

(2009) Roghaiyeh Ravash et al.   APPLIED PHYSICS LETTERS

Reduction of stacking fault density in m-plane GaN grown on SiC

(2008) Y. S. Cho et al.   APPLIED PHYSICS LETTERS