Single-electron counting statistics of shot noise in nanowire Si metal-oxide-semiconductor field-effect transistors

Shot noise in the transport of single electrons in a Si metal-oxide-semiconductor field-effect transistor is monitored by real-time measurement with a high-charge-sensitivity electrometer. In the current range between zepto and attoamperes, the current characteristics are found to be divided into two regimes: a temperature-independent regime in the lower current range and a temperature-dependent one in the higher current range. A time-domain analysis reveals that, for both regimes, the single-electron transport obeys a pure Poisson process with the Fano factor's being nearly unity, while the shot noise is suppressed with reduced Fano factors around the boundary. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3589373]