Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3575583
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Funding
- U.S. Department of Energy [DE-FG36-09GO1900, DE-AC02-06CH11357]
- MIT-Spain
- Spanish Ministerio de Ciencia e Innovacion [TEC2008-06798-C03-02]
- NSF
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The evolution during silicon solar cell processing of performance-limiting iron impurities is investigated with synchrotron-based x-ray fluorescence microscopy. We find that during industrial phosphorus diffusion, bulk precipitate dissolution is incomplete in wafers with high metal content, specifically ingot border material. Postdiffusion low-temperature annealing is not found to alter appreciably the size or spatial distribution of FeSi2 precipitates, although cell efficiency improves due to a decrease in iron interstitial concentration. Gettering simulations successfully model experiment results and suggest the efficacy of high- and low-temperature processing to reduce both precipitated and interstitial iron concentrations, respectively. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3575583]
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