Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3586767
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Funding
- NCCR Quantum Photonics
- Swiss National Science Foundation [200020-122294, 200021-127195]
- Swiss National Science Foundation (SNF) [200020-122294, 200021_127195] Funding Source: Swiss National Science Foundation (SNF)
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We report on the growth conditions of AlInN layers grown on free-standing GaN substrates. We found that an average indium content of similar to 20% is needed to obtain defect-free AlInN/GaN multilayers. This is larger than the commonly accepted value of 18% for lattice-matched condition. A model where tensile strain at the GaN/AlInN interface is induced by indium surface segregation occurring in AlInN layers is proposed to explain this discrepancy. A high In/Al flux ratio is shown to reduce this effect and allowed obtaining a defect-free AlInN/GaN Bragg reflector with a peak reflectivity of 99.6% suitable for vertical cavity light emitting devices. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3586767]
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