4.6 Article

AX centers in II-VI semiconductors: Hybrid functional calculations

Journal

APPLIED PHYSICS LETTERS
Volume 98, Issue 18, Pages -

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AIP Publishing
DOI: 10.1063/1.3583661

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  1. U.S. DOE Office of Nonproliferation Research and Development [NA22]

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Hybrid functional calculations predict significantly enhanced stability of AX centers against shallow acceptors in selected II-VI semiconductors (ZnO, ZnS, and ZnSe), as compared to the calculations based on local density approximation and generalized gradient approximation. The results agree well with the experimental observations on the p-type doping of ZnS and ZnSe. The improved description of the AX centers by hybrid functional calculations is due to the correction of the valence band maximum of the semiconductor. (C) 2011 American Institute of Physics. [doi:10.1063/1.3583661]

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