Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy

Magnetoresistance Effect in Tunnel Junctions with Perpendicularly MagnetizedD022-Mn3-δGa Electrode and MgO Barrier

(2011) Takahide Kubota et al.   Applied Physics Express

Effect of metallic Mg insertion on the magnetoresistance effect in MgO-based tunnel junctions using D022-Mn3-δGa perpendicularly magnetized spin polarizer

(2011) Takahide Kubota et al.   JOURNAL OF APPLIED PHYSICS

High spin polarization in epitaxial films of ferrimagnetic Mn3Ga

(2011) H. Kurt et al.   PHYSICAL REVIEW B

Long-Lived Ultrafast Spin Precession in Manganese Alloys Films with a Large Perpendicular Magnetic Anisotropy

(2011) S. Mizukami et al.   PHYSICAL REVIEW LETTERS

High Magnetoresistance Ratio and Low Resistance–Area Product in Magnetic Tunnel Junctions with Perpendicularly Magnetized Electrodes

(2010) Kay Yakushiji et al.   Applied Physics Express

A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

(2010) S. Ikeda et al.   NATURE MATERIALS

Epitaxial Mn2.5Ga thin films with giant perpendicular magnetic anisotropy for spintronic devices

(2009) Feng Wu et al.   APPLIED PHYSICS LETTERS

MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

(2009) K. Mizunuma et al.   APPLIED PHYSICS LETTERS

Spin-Transfer Switching and Thermal Stability in an FePt/Au/FePt Nanopillar Prepared by Alternate Monatomic Layer Deposition

(2008) Kay Yakushiji et al.   Applied Physics Express

Tunneling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization L10-CoPt electrodes

(2008) Gukcheon Kim et al.   APPLIED PHYSICS LETTERS

Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

(2008) S. Ikeda et al.   APPLIED PHYSICS LETTERS