Effect of SiC wafer miscut angle on the morphology and Hall mobility of epitaxially grown graphene

Title
Effect of SiC wafer miscut angle on the morphology and Hall mobility of epitaxially grown graphene
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 22, Pages 222105
Publisher
AIP Publishing
Online
2011-06-04
DOI
10.1063/1.3595945

Ask authors/readers for more resources

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started