4.6 Article

ZnO/Sn:In2O3 and ZnO/CdTe band offsets for extremely thin absorber photovoltaics

Journal

APPLIED PHYSICS LETTERS
Volume 99, Issue 26, Pages -

Publisher

AIP Publishing
DOI: 10.1063/1.3672218

Keywords

cadmium compounds; conduction bands; density functional theory; II-VI semiconductors; indium compounds; semiconductor thin films; tin; wide band gap semiconductors; X-ray photoelectron spectra; zinc compounds

Funding

  1. U.S. Department of Energy's Office of Biological and Environmental Research at the Pacific Northwest National Laboratory
  2. PNNL

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Band alignments were measured by x-ray photoelectron spectroscopy for thin films of ZnO on polycrystalline Sn:In2O3 (ITO) and single crystal CdTe. Hybrid density functional theory calculations of epitaxial zinc blende ZnO(001) on CdTe(001) were performed to compare with experiment. A conduction band (CB) offset of -0.6 eV was measured for ZnO/ITO, which is larger than desired for efficient electron injection. For ZnO/CdTe, the experimental conduction band offset of 0.25 eV is smaller than the calculated value of 0.67 eV, possibly due to the TeOx layer at the ZnO/CdTe interface. The measured conduction band offset for ZnO/CdTe is favorable for photovoltaic devices. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3672218]

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