Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3559231
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We show that high quality tensile-strained n-doped germanium films can be obtained on InGaAs buffer layers using metal-organic chemical vapor deposition with isobutyl germane as germanium precursor. A tensile strain up to 0.5% is achieved, simultaneously measured by x-ray diffraction and Raman spectroscopy. The effect of tensile strain on band gap energy is directly observed by room temperature direct band gap photoluminescence. (C) 2011 American Institute of Physics. [doi:10.1063/1.3559231]
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