Electronic structure of Pt based topological Heusler compounds with C1b structure and “zero band gap”

Thermoelectric properties and electronic structure of substituted Heusler compounds: NiTi0.3−xScxZr0.35Hf0.35Sn

(2010) Siham Ouardi et al.   APPLIED PHYSICS LETTERS

The birth of topological insulators

(2010) Joel E. Moore   NATURE

Tunable multifunctional topological insulators in ternary Heusler compounds

(2010) Stanislav Chadov et al.   NATURE MATERIALS

Electronic transport properties of electron- and hole-doped semiconductingC1bHeusler compounds:NiTi1−xMxSn(M=Sc,V)

(2010) Siham Ouardi et al.   PHYSICAL REVIEW B

I-II-V half-Heusler compounds for optoelectronics:Ab initiocalculations

(2010) David Kieven et al.   PHYSICAL REVIEW B

Role of Electronic Structure in the Martensitic Phase Transition ofNi2Mn1+xSn1−xStudied by Hard-X-Ray Photoelectron Spectroscopy andAb InitioCalculation

(2010) M. Ye et al.   PHYSICAL REVIEW LETTERS

Zero-gap materials for future spintronics, electronics and optics

(2010) Xiao-Lin Wang et al.   NPG Asia Materials

New and Old Concepts in Thermoelectric Materials

(2009) Joseph R. Sootsman et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Hard X-ray photoemission spectroscopy

(2009) Keisuke Kobayashi   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT

Detection of the valence band in buried Co2MnSi–MgO tunnel junctions by means of photoemission spectroscopy

(2008) Gerhard H. Fecher et al.   APPLIED PHYSICS LETTERS

Proposal for a New Class of Materials: Spin Gapless Semiconductors

(2008) X. L. Wang   PHYSICAL REVIEW LETTERS