Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3580613
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Funding
- ERA-NET NanoSci-E + LECSIN project
- EPSRC
- EPSRC [EP/H00680X/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/H00680X/1] Funding Source: researchfish
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We investigate the electrical properties of silicon-on-insulator (SOI) photonic crystals as a function of both doping level and air filling factor. The resistance trends can be clearly explained by the presence of a depletion region around the sidewalls of the holes that is caused by band pinning at the surface. To understand the trade-off between the carrier transport and the optical losses due to free electrons in the doped SOI, we also measured the resonant modes of L3 photonic crystal nanocavities and found that surprisingly high doping levels, up to 10(18)/cm(3), are acceptable for practical devices with Q factors as high as 4 x 10(4). (C) 2011 American Institute of Physics. [doi: 10.1063/1.3580613]
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