Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition

Title
Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 19, Pages 193504
Publisher
AIP Publishing
Online
2011-05-14
DOI
10.1063/1.3589120

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