In situ vacuum measurement of the thickness dependence of electron mobility in naphthalenetetracarboxylic diimide-based field-effect transistors

Published 2011 View Full Article

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Title
In situ vacuum measurement of the thickness dependence of electron mobility in naphthalenetetracarboxylic diimide-based field-effect transistors
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 98, Issue 2, Pages 023306
Publisher
AIP Publishing
Online
2011-01-17
DOI
10.1063/1.3534802
References
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