Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3664132
Keywords
annealing; antimony compounds; ferroelectric materials; germanium compounds; grain growth; metal-insulator transition; reflectivity; scanning electron microscopy; X-ray diffraction
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Funding
- National High-tech R&D Program of China (863 Program) [2011AA010404, 2010DFA11050]
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Unlike its two components, the temperature coefficient of resistivity (TCR) of GeTe/Sb2Te3 multilayer (ML) increases from negative to positive on annealing, indicating an insulator-metal transition (IMT). Impedance spectroscopy measurements demonstrate that the grain boundary resistance (negative TCR) determines the total resistance of initial ML. As grain grows, which is confirmed by x-ray diffraction, scanning electron microscope, and optical reflectivity measurements, the contribution of grain resistance (positive TCR) increases gradually to the leading part and finally accomplishes the IMT in a sufficiently crystallized film. Furthermore, the artificially introduced interfaces form additional potential barrier in ML and also modulate its IMT behavior. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664132]
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