Journal
APPLIED PHYSICS LETTERS
Volume 99, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3609858
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Funding
- SRC-NRI-MIND
- NSF [ECCS-0925835, DMR-0820382]
- 3M Company
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0847638] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0925835] Funding Source: National Science Foundation
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We report on simultaneous thermoelectric power and four-probe resistance measurements of chemical vapor deposition grown graphene during a degas process, as well as in exposure to various gases. For all investigated samples, a dramatic change in thermoelectric power was observed and found to be sensitive to the gas molecule charge doping on the surface of graphene. The observed p-type behavior under ambient conditions supports an electrochemical charge transfer mechanism between the graphene and oxygen redox couple, while the n-type behavior under degassed conditions is ascribed to the electron doping caused by the surface states of the SiO2/Si substrate. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3609858]
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