4.6 Article

Nanoscale ferroelectric switching behavior at charged domain boundaries studied by angle-resolved piezoresponse force microscopy

Journal

APPLIED PHYSICS LETTERS
Volume 99, Issue 14, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3646761

Keywords

dielectric polarisation; domain boundaries; ferroelectric ceramics; ferroelectric switching; ferroelectric thin films; lead compounds; piezoceramics; piezoelectric thin films; piezoelectricity

Funding

  1. Nano RD Program [2010-0019123]
  2. Basic Science Research Program [314-2008-1-D00172]
  3. Conversion Research Center Program [2011K000674]
  4. National Research Foundation (NRF) [2010-0015063]
  5. Ministry of Education, Science and Technology (MEST)
  6. New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP)
  7. Ministry of Knowledge Economy, Republic of Korea [20103020060010]
  8. UChicago Argonne [DE-AC02-06CH11357]
  9. Chung-Ang University

Ask authors/readers for more resources

We investigated the effect of charged domain boundaries (CDBs) on the coercive voltage (V-c) in polycrystalline Pb(Zr0.25Ti0.75)O-3 (PZT) thin films using angle-resolved piezoresponse force microscopy (AR-PFM). By using the AR-PFM technique, we could observe the detailed domain structure with various degrees of CDBs including neutral domain boundaries in the PZT thin films. We found that the V-c increases at CDBs induced by polarization discontinuities. We attribute the change in V-c to the built-in field created by uncompensated polarization charges at the CDBs in the PZT thin films. (C) 2011 American Institute of Physics. [doi:10.1063/1.3646761]

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