Effect of free-carrier concentration on the phase transition and vibrational properties of VO2

Direct measurement of compositional complexity-induced electronic inhomogeneity in VO2 thin films grown on gate dielectrics

(2011) Zheng Yang et al.   APPLIED PHYSICS LETTERS

Influence of defects on structural and electrical properties of VO2 thin films

(2011) Changhong Chen et al.   JOURNAL OF APPLIED PHYSICS

VO2 multidomain heteroepitaxial growth and terahertz transmission modulation

(2010) Changhong Chen et al.   APPLIED PHYSICS LETTERS

Active Terahertz Nanoantennas Based on VO2Phase Transition

(2010) Minah Seo et al.   NANO LETTERS

Effects of strain on the electronic structure ofVO2

(2010) Bence Lazarovits et al.   PHYSICAL REVIEW B

Changes in VO2 band structure induced by charge localization and surface segregation

(2009) Changhong Chen et al.   APPLIED PHYSICS LETTERS

Gas Sensor Based on Metal−Insulator Transition in VO2Nanowire Thermistor

(2009) Evgheni Strelcov et al.   NANO LETTERS

Electrostatic modification of infrared response in gated structures based on VO2

(2008) M. M. Qazilbash et al.   APPLIED PHYSICS LETTERS

Optical properties ofV1−xCrxO2compounds under high pressure

(2008) C. Marini et al.   PHYSICAL REVIEW B

Switching of the Mott transition based on hole-driven MIT theory

(2007) Hyun-Tak Kim et al.   PHYSICA B-CONDENSED MATTER