4.6 Article

III-V Nitride based piezoresistive microcantilever for sensing applications

Journal

APPLIED PHYSICS LETTERS
Volume 99, Issue 19, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3657467

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Funding

  1. National Science Foundation [ECCS-0801435, ECCS-0846898]
  2. Army Research Office [W911NF-08-0299]

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III-V Nitride based microcantilevers, with AlGaN/GaN heterostructure field effect transistor as the piezoresistive deflection transducer, have been investigated under steady state, transient, ac, and UV illuminated conditions and compared to theoretical calculations. The steady state transverse gauge factor (GF(t)) was found to be much larger than theoretical estimates and increased regularly with more negative gate bias. Transient GFt demonstrated opposite sign but similar gate bias dependence and was measured as high as similar to 860. Measurements under ac biasing conditions and UV illumination resulted in a lower GFt of similar to 13, which agrees with theoretical calculations owing to elimination of charge trapping effects. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3657467]

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