Asymmetric pulsing for reliable operation of titanium/manganite memristors

Improvement of reproducible resistance switching in polycrystalline tungsten oxide films by in situ oxygen annealing

(2010) D. S. Shang et al.   APPLIED PHYSICS LETTERS

Endurance improvement of resistance switching behaviors in the La0.7Ca0.3MnO3 film based devices with Ag–Al alloy top electrodes

(2010) R. Yang et al.   JOURNAL OF APPLIED PHYSICS

Hysteresis switching loops in Ag-manganite memristive interfaces

(2010) N. Ghenzi et al.   JOURNAL OF APPLIED PHYSICS

Mechanism for bipolar resistive switching in transition-metal oxides

(2010) M. J. Rozenberg et al.   PHYSICAL REVIEW B

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices

(2009) Min Kyu Yang et al.   APPLIED PHYSICS LETTERS

Mechanism for bipolar switching in aPt/TiO2/Ptresistive switching cell

(2009) Doo Seok Jeong et al.   PHYSICAL REVIEW B

Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

(2008) Wan Shen et al.   APPLIED PHYSICS LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology