Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3489419
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Funding
- Japan Science and Technology Agency
- Centers of Excellence
- Ministry of Education, Culture, Sports, Science and Technology of Japan
- Ozawa and Yoshikawa Memorial Electronics Research Foundation
- Grants-in-Aid for Scientific Research [21241037] Funding Source: KAKEN
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We propose and demonstrate the application of high-pressure water-vapor annealing (HWA) to silicon photonic crystals for surface passivation. We find that the photoluminescence intensity from a sample treated with HWA is enhanced by a factor of similar to 6. We confirm that this enhancement originates from a reduction in the surface-recombination velocity (SRV) by a factor of similar to 0.4. The estimated SRV is as low as 2.1x10(3) cm/s at room temperature. These results indicate that HWA is a promising approach for efficient surface passivation in silicon photonic nanostructures. (C) 2010 American Institute of Physics. [doi:10.1063/1.3489419]
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