Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3463456
Keywords
catalysis; catalysts; elemental semiconductors; nanofabrication; nanowires; semiconductor growth; semiconductor quantum wires; silicon; solubility; tin
Categories
Ask authors/readers for more resources
We investigate piezoresistance in lithographically defined silicon nanowires of various cross-sectional aspect ratios. Both < 110 >- and < 100 >- oriented nanowires are investigated under < 110 >-oriented strain. The nanowire thickness is varied from 23 to 45 nm and the nanowire width is varied from 5 to 113 nm. Our data shows piezoresistance in silicon nanowires being a surface induced effect with {110} surfaces inducing a much larger piezoresistance than {100} surfaces. This is consistent with a higher density of surface states on {110} surfaces than on {100} surfaces. Our experimental findings support recent computational work pointing toward surface states being the source of giant piezoresistance in silicon nanowires. (C) 2010 American Institute of Physics. [doi:10.1063/1.3463456]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available