Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3432398
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- KOSEF at Seoul National University [R17-2008-033-01000-0]
- FPRD
- Samsung Electronics
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We investigated the influence of oxygen deficiency on the Fermi level (E-F) of ZnO thin film prepared by pulsed laser deposition (PLD). For this purpose, we adopted in situ x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. The oxygen deficiency was effectively controlled by varying the oxygen partial pressure [P(O-2)] during the PLD. The E-F shifted by +0.6 eV as the P(O-2) decreased from 10 to 3.3 Pa. This shift indicates a significant change in the energy balance in the oxygen-deficient ZnO films. This fact suggests that the very large change in the resistivity of ZnO thin films resulting from the oxygen deficiency could be attributed to the E-F shift rather than grain boundary formation in the ZnO film. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3432398]
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