Role of ITO electrode in the resistive switching behavior of TiN/HfO2/ITO memory devices at different annealing temperatures

Published 2015 View Full Article

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Title
Role of ITO electrode in the resistive switching behavior of TiN/HfO2/ITO memory devices at different annealing temperatures
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 54, Issue 5, Pages 054201
Publisher
Japan Society of Applied Physics
Online
2015-04-07
DOI
10.7567/jjap.54.054201

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