Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3291679
Keywords
annealing; crystal morphology; metallic epitaxial layers; nanostructured materials; nickel alloys; nickel compounds; surface energy
Categories
Funding
- European Union
- Chinese Government [2009ZX02035]
- Chinese Scholarship Council (CSC)
- Knut and Alice Wallenberg Foundation
Ask authors/readers for more resources
The formation of ultrathin silicide films of Ni1-xPtx at 450-850 degrees C is reported. Without Pt (x=0) and for t(Ni)< 4 nm, epitaxially aligned NiSi2-y films readily grow and exhibit extraordinary morphological stability up to 800 degrees C. For t(Ni)>= 4 nm, polycrystalline NiSi films form and agglomerate at lower temperatures for thinner films. Without Ni (x=1) and for t(Pt)=1-20 nm, the annealing behavior of the resulting PtSi films follows that for the NiSi films. The results for Ni1-xPtx of other compositions support the above observations. Surface energy is discussed as the cause responsible for the distinct behavior in phase formation and morphological stability.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available