Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3302454
Keywords
electron traps; hole traps; photoconducting materials; photoconductivity; photoemission; selenium; sensors; space charge
Categories
Funding
- Natural Sciences and Engineering Research Council of Canada (NSERC)
Ask authors/readers for more resources
Memory effects in direct detection solid-state photoconductors are attributed to interrupted charge transport by traps in the bulk and result in persistent photocurrent lag and ghosting. The identified sources for image lag following the cessation of x-ray exposure are the inhomogeneous electric field's spatial distribution and the detrapping of the bulk space charge. This work shows that the latter is the dominant mechanism for the persistent photocurrent lag in stabilized n-i-p amorphous selenium photoconductors and proposes unipolar charge-sensing detector design for reducing image lag and improving the temporal performance of direct conversion x-ray imagers.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available