Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3516160
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Funding
- NSFC [10974237, 10721404]
- Ministry of Science and Technology of China [2009CB929400]
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Bi2Se3 is a typical three-dimensional topological insulator but always exhibits metallic behavior due to heavy n-type doping. With in situ angle-resolved photoemission spectroscopy, we have systematically studied the doping effects of Sb and Pb on the electronic structure of Bi2Se3 films prepared by molecular beam epitaxy. The surface chemical potential of Bi2Se3 can be tuned by 110 and 145 meV by doping Sb and Pb atoms, respectively. By codoping Pb and Sb, the Fermi level can be shifted from above to below the Dirac point. The underlying mechanism in different doping effects of Sb and Pb is discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3516160]
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