InSb1−xNx/InSb/GaAs alloys by thermal annealing for midinfrared photodetection

Effect of thermal annealing on properties of InSbN grown by molecular beam epitaxy

(2010) K. P. Lim et al.   APPLIED PHYSICS LETTERS

InSbN based p-n junctions for infrared photodetection

(2010) X.Z. Chen et al.   ELECTRONICS LETTERS

Influence of N interstitials on the electronic properties of GaAsN alloys

(2009) Y. Jin et al.   APPLIED PHYSICS LETTERS

Properties of InSbN grown on GaAs by radio frequency nitrogen plasma-assisted molecular beam epitaxy

(2009) K P Lim et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Growth temperature and plasma power effects on N incorporation in InSbN grown by molecular beam epitaxy

(2009) K. P. Lim et al.   Physica Status Solidi-Rapid Research Letters

InSbN alloys prepared by two-step ion implantation for infrared photodetection

(2008) D. H. Zhang et al.   APPLIED PHYSICS LETTERS

Molecular beam epitaxial growth of InAsN:Sb for midinfrared Optoelectronics

(2008) Q. Zhuang et al.   APPLIED PHYSICS LETTERS

Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications

(2008) L. Buckle et al.   MICROELECTRONICS JOURNAL

Theory of conduction band structure ofInNxSb1−xandGaNxSb1−xdilute nitride alloys

(2008) A. Lindsay et al.   PHYSICAL REVIEW B