Influence of the interface-induced electron self-energy on the subthreshold characteristics of silicon gate-all-around nanowire transistors

Atomistic modeling of electron-phonon coupling and transport properties inn-type [110] silicon nanowires

(2010) Wenxing Zhang et al.   PHYSICAL REVIEW B

Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

(2009) Mathieu Luisier et al.   PHYSICAL REVIEW B

GW investigation of interface-induced correlation effects on transport properties in realistic nanoscale structures

(2009) Changsheng Li et al.   PHYSICAL REVIEW B

Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering

(2008) E. B. Ramayya et al.   JOURNAL OF APPLIED PHYSICS

Screening and polaronic effects induced by a metallic gate and a surrounding oxide on donor and acceptor impurities in silicon nanowires

(2008) Mamadou Diarra et al.   JOURNAL OF APPLIED PHYSICS

Screening in two dimensions:GWcalculations for surfaces and thin films using the repeated-slab approach

(2008) Christoph Freysoldt et al.   PHYSICAL REVIEW B