Reduction of gate hysteresis above ambient temperature via ambipolar pulsed gate sweeps in carbon nanotube field effect transistors for sensor applications

Title
Reduction of gate hysteresis above ambient temperature via ambipolar pulsed gate sweeps in carbon nanotube field effect transistors for sensor applications
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 15, Pages 153103
Publisher
AIP Publishing
Online
2010-10-12
DOI
10.1063/1.3499363

Ask authors/readers for more resources

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search