Metal-oxide-high-k-oxide-silicon memory structure incorporating a Tb2O3 charge trapping layer

Published 2010 View Full Article

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Title
Metal-oxide-high-k-oxide-silicon memory structure incorporating a Tb2O3 charge trapping layer
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 1, Pages 012906
Publisher
AIP Publishing
Online
2010-07-12
DOI
10.1063/1.3462321
References
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