Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

Published 2010 View Full Article

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Title
Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 1, Pages 013502
Publisher
AIP Publishing
Online
2010-07-08
DOI
10.1063/1.3462294

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