Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3343347
Keywords
gallium compounds; III-V semiconductors; laser beams; nanowires; polarisation; Raman spectra; wide band gap semiconductors
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Funding
- German Ministry of Education and Research
- U.S. Department of Energy [DE-AC02-98CH1-886]
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Single GaN nanowires and larger GaN ensembles are investigated by Raman spectroscopy. Spectra of nanowire ensembles prove the high crystal quality and are in agreement with selection rules for the wurtzite structure. Single nanowires are studied with a spatial resolution of the order of 400 nm for different polarization directions of the incident laser beam relative to the nanowire axis. In the single wire spectrum, only the A(1)(TO) was observed and the Raman intensity was suppressed for perpendicular polarization. These results confirm that Raman scattering in isolated GaN nanowires is governed by size effects.
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