Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3303986
Keywords
carrier density; chromium; doping profiles; ferromagnetic materials; indium compounds; magnetic switching; magnetic thin films; magnetisation; manganese; semiconductor doping; semiconductor thin films; semimagnetic semiconductors; tin
Categories
Funding
- 863 Program [2009AA03Z446]
- NSFC [60776008]
- NCET [07-0527]
- RFDP [20070118001]
- NSFSX [2008011042-1]
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Mn and Cr-doped In2O3 films with Sn codoping were deposited on sapphire substrate by pulsed laser deposition. The ferromagnetism of Mn-doped In2O3 films shows reversible behavior, which can be switched between on and off states by controlling the carrier density via varying Sn concentration. The enhanced ferromagnetism in Cr-doped In2O3 films is observed due to the significant increase in the carrier density with Sn doping, and the saturation magnetization can reach 2.10 mu(B)/Cr. Most importantly, both of the experiment results reveal that the carrier density and the net spin are two crucial factors for producing and tuning ferromagnetism.
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