4.6 Article

Role of carrier and spin in tuning ferromagnetism in Mn and Cr-doped In2O3 thin films

Journal

APPLIED PHYSICS LETTERS
Volume 96, Issue 5, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3303986

Keywords

carrier density; chromium; doping profiles; ferromagnetic materials; indium compounds; magnetic switching; magnetic thin films; magnetisation; manganese; semiconductor doping; semiconductor thin films; semimagnetic semiconductors; tin

Funding

  1. 863 Program [2009AA03Z446]
  2. NSFC [60776008]
  3. NCET [07-0527]
  4. RFDP [20070118001]
  5. NSFSX [2008011042-1]

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Mn and Cr-doped In2O3 films with Sn codoping were deposited on sapphire substrate by pulsed laser deposition. The ferromagnetism of Mn-doped In2O3 films shows reversible behavior, which can be switched between on and off states by controlling the carrier density via varying Sn concentration. The enhanced ferromagnetism in Cr-doped In2O3 films is observed due to the significant increase in the carrier density with Sn doping, and the saturation magnetization can reach 2.10 mu(B)/Cr. Most importantly, both of the experiment results reveal that the carrier density and the net spin are two crucial factors for producing and tuning ferromagnetism.

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