Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3467457
Keywords
hole traps; II-VI semiconductors; nanowires; photoconductivity; photoluminescence; semiconductor quantum wires; surface states; wide band gap semiconductors; zinc compounds
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Funding
- NSFC [10804002]
- MOST [2007CB936202, 2009CB623703]
- Research Fund for the Doctoral Program of Higher Education (RFDP)
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We report experimental results of ultralow frequency photocurrent oscillation in individual ZnO nanowires. Consecutive photocurrent and photoluminescence measurements corroborate the process of capture and release of photogenerated holes by surface trap states. The dynamic process results in the oscillation of the thickness of surface depletion region, which is believed to be responsible for the observed photocurrent oscillation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467457]
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