Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3518069
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Funding
- NSERC of Canada
- FQRNT and MDEIE of Quebec
- U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering
- LLNL [DE-AC52-07NA27344]
- Canada Research Chairs
- NSERC
- FQRNT
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Using dynamic transmission electron microscopy we measure nucleation and growth rates during laser driven crystallization of amorphous germanium (a-Ge) films supported by silicon monoxide membranes. The films were crystallized using single 532 nm laser pulses at a fluence of similar to 128 mJ cm(-2). Devitrification processes initiate less than 20 ns after excitation and are complete within similar to 55 ns. The nucleation rate was estimated by tracking crystallite density as a function of time and reached a maximum of similar to 1.6 X 10(22) nuclei/cm(3) s. This study provides information on nanocrystallization phenomena in a-Ge, which is important for the implementation of nanostructured group IV semiconductors in optoelectronics devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3518069]
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