Role of strain in polarization switching in semipolar InGaN/GaN quantum wells

500-nm Optical Gain Anisotropy of Semipolar (11\bar22) InGaN Quantum Wells

(2009) Dmitry S. Sizov et al.   Applied Physics Express

Correlation between Optical Polarization and Luminescence Morphology of (11\bar22)-Oriented InGaN/GaN Quantum-Well Structures

(2009) Hisashi Masui et al.   Applied Physics Express

Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates

(2009) Anurag Tyagi et al.   APPLIED PHYSICS LETTERS

Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN

(2009) Qimin Yan et al.   APPLIED PHYSICS LETTERS

Prospects for LED lighting

(2009) Siddha Pimputkar et al.   Nature Photonics

Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11\bar22) InGaN Multiple Quantum Well Laser Diode Structures

(2008) Anurag Tyagi et al.   Applied Physics Express

Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure

(2008) Hisashi Masui et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Polarization switching phenomena in semipolarInxGa1−xN/GaNquantum well active layers

(2008) M. Ueda et al.   PHYSICAL REVIEW B

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

(2008) Patrick Rinke et al.   PHYSICAL REVIEW B