Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3429604
Keywords
aluminium; atomic force microscopy; deep levels; dislocations; gallium compounds; III-V semiconductors; impurity states; nanowires; Poole-Frenkel effect; semiconductor doping; semiconductor quantum wires; semiconductor thin films; wide band gap semiconductors
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Funding
- Ministry of Education, Culture, Sports, and Technology (MEXT) of Japan [19053001, 22686059]
- Japan Society for the Promotion of Science (JSPS)
- PRESTO, Japan Science and Technology Agency
- Grants-in-Aid for Scientific Research [19053002] Funding Source: KAKEN
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Conductive nanowires were fabricated in GaN thin film by selectively doping of Al along threading dislocations. Electrical current flow localized at the nanowires was directly measured by a contact mode atomic force microscope. The current flow at the nanowires was considered to be Frenkel-Poole emission mode, suggesting the existence of the deep acceptor level along the nanowires as a possible cause of the current flow. The results obtained in this study show the possibility for fabricating nanowires using pipe-diffusion at dislocations in solid thin films. (C) 2010 American Institute of Physics. [doi:10.1063/1.3429604]
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