Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field

High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes

(2009) Lei Wang et al.   APPLIED PHYSICS LETTERS

Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime

(2009) H.P. Zhao et al.   IET Optoelectronics

Recombination dynamics and screening of the internal electric field inZnO/ZnxMg1−xOmultiple quantum wells

(2009) C. R. Hall et al.   PHYSICAL REVIEW B

Fundamentals of zinc oxide as a semiconductor

(2009) Anderson Janotti et al.   REPORTS ON PROGRESS IN PHYSICS

Ultrafast spectroscopy of ZnO/ZnMgO quantum wells

(2008) J.A. Davis et al.   Laser & Photonics Reviews

Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing

(2008) J A Davis et al.   NANOTECHNOLOGY