Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3328100
Keywords
carrier density; nanolithography; organic field effect transistors; organic semiconductors; soft lithography
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Funding
- National Science Council, Taiwan [NSC 96-2112-M-006-015MY3, NSC 97-3114-M-006-001]
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The charge carrier transport efficiency and issues of patterning in organic semiconductors limit the potential range of microelectronic and optoelectronic applications of organic devices in nanoscale. We demonstrate high-performance organic field-effect transistors (OFETs) with a mobility of approximately 2.5 cm(2)/V s using nanogroove gate-dielectrics formed by nanoimprinting. The preferred flow of charge carriers in OFETs parallel to the nanogrooves yields a high mobility anisotropic ratio (above 220), providing a built-in autopattern organic semiconductor function with nanoscale resolution. This nanostructure embedded device has great potential for use in the manufacture and lithography-free patterning of organic semiconductor films in integrated circuits.
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