Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3357428
Keywords
carrier mobility; elemental semiconductors; fluorine; high-k dielectric thin films; insulated gate field effect transistors; interface states; passivation; plasma materials processing; silicon; terbium compounds; thin film transistors
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Funding
- National Science Council (NSC) of China [NSC-98-2221-E-182-056-MY3]
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In this letter, we have developed a high-k Tb2O3 gate dielectric polycrystalline silicon (poly-Si) thin-film transistors (TFTs) prepared under a CF4 plasma treatment. A high-performance TFT device that has a low threshold voltage of 0.89 V, a high effective carrier mobility of 59.6 cm(2)/V s, a small subthreshold swing of 212 mV/dec, and a high I-ON/I-OFF current ratio of 8.15x10(6) can be achieved. This phenomenon is attributed to fluorine atoms into poly-Si films can effectively passivate the trap states near the Tb2O3/poly-Si interface. The fluorine incorporation also enhanced electrical reliability of the Tb2O3 poly-Si TFT. All of these results suggest that the CF4 plasma-treated poly-Si Tb2O3 TFT is a good candidate for high-performance TFTs.
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