Article
Optics
Shengjun Zhou, Zehong Wan, Yu Lei, Bin Tang, Guoyi Tao, Peng Du, Xiaoyu Zhao
Summary: This study proposes the use of InGaN quantum wells with gradually varying indium content to enhance the performance of GaN-based green LEDs. Experimental results demonstrate that green LEDs with gradually varying indium content exhibit higher light output power and lower efficiency droop.
Article
Materials Science, Multidisciplinary
Xingjun Luo, Weidong Song, Fangliang Gao, Jiang Shi, Chuan Cheng, Jiaqi Guo, Longfei He, Qing Liu, Yuqing Yang, Shuti Li, Qibao Wu
Summary: A flexible LED based on multiple quantum well microwires is fabricated and its performance is modulated by external strain. The best performance is achieved at -1% compressive strain, with increased external quantum efficiency by 14.2% and reduced efficiency droop by 17.9%, attributed to strain-induced piezoelectric polarization charges tuning the energy band structure.
ADVANCED ENGINEERING MATERIALS
(2021)
Article
Optics
Katarzyna Pieniak, Witold Trzeciakowski, Grzegorz Muziol, Anna Kafar, Marcin Siekacz, Czeslaw Skierbiszewski, Tadeusz Suski
Summary: The study examined electroluminescence from In0.17Ga0.83N/GaN quantum wells of LEDs and LDs, finding a transition from ground-states recombination to excited states recombination with increasing QW width. The effect is accompanied by partial or complete screening of the built-in electric field with increasing driving current, which was studied using a high pressure method. Investigations were supported by simulations of the variation with driving current of electron and hole wavefunctions overlap affecting the recombination channel and built-in electric field.
Article
Chemistry, Physical
Do-Yeong Shin, Taehwan Kim, Ozgun Akyuz, Hilmi Volkan Demir, In-Hwan Lee
Summary: This study presents an improved efficiency design for white LEDs by integrating blue nanorod LEDs with green and red-emitting perovskite nanocrystal films. The design utilizes the localized surface plasmon effect of Ag@SiO2 nanoparticles to enhance the photoluminescence intensity of blue LEDs, while the high-power blue LED backlight improves the perovskite photoluminescence intensity. The resulting white LED with Ag@SiO2 nanoparticle-embedded nanorods demonstrates a 62% increase in photoluminescence intensity compared to planar white LEDs.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Review
Materials Science, Multidisciplinary
Zhaojun Liu, Byung-Ryool Hyun, Yujia Sheng, Chun-Jung Lin, Mengyuan Changhu, Yonghong Lin, Chih-Hsiang Ho, Jr-Hau He, Hao-Chung Kuo
Summary: Micro-light-emitting diodes (Micro-LEDs) based on gallium nitride (GaN) materials offer versatile platforms for various applications, including displays, data communication tools, photodetectors, and sensors. By combining with quantum dots, Micro-LEDs can achieve efficient full-color displays and high-speed visible light communications.
ADVANCED MATERIALS TECHNOLOGIES
(2022)
Article
Engineering, Electrical & Electronic
Jiahao Yin, Xiaoshuai An, Liang Chen, Jing Li, Jianan Wu, Yumeng Luo, Qing Wang, Hongyu Yu, Kwai Hei Li
Summary: The study focused on monolithic integrated photodetectors (PDs) in InGaN/GaN LEDs for monitoring LED intensity fluctuations. Through simulation and experiments, it was found that placing the PD in the center of the LED resulted in a 58% increase in detected photocurrent with minimal impact on the LED emission profile compared to placing the PD at the edge. Encapsulating the LED-PD device with yellow phosphor enabled white light emission, and the on-chip PD showed similar sensing behaviors to an external Si-based photodiode. The optimal monolithic PD design offered comparable sensing capabilities, compactness, insensitivity to ambient lighting, and minimal influence on the LED emission profile, making it suitable for real-time monitoring of LED intensity in practical and scientific lighting applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Analytical
Claudia Casu, Matteo Buffolo, Alessandro Caria, Carlo De Santi, Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini
Summary: This study investigates the defectiveness and degradation mechanisms of InGaN-based quantum wells. By designing a color-coded structure and using numerical simulations, it is found that an increase in traps in the active region is the main cause of degradation. The degradation process consists of two phases, with the first phase occurring in the quantum well closer to the p-contact. The stronger degradation in this well may be due to a lowering of injection efficiency or an increase in SRH recombination.
Article
Chemistry, Analytical
Wei Liu, Zeyu Liu, Hengyan Zhao, Junjie Gao
Summary: This paper investigates the electroluminescence characterization of yellow-light-emitting InGaN/GaN multiple quantum wells (MQWs) with different In content. The simulation results show that high-In-content yellow MQWs exhibit enhanced luminescence efficiency at low injection currents. However, at high injection conditions, the luminescence efficiency of yellow MQWs deteriorates with increasing In content.
Review
Crystallography
Panpan Li, Hongjian Li, Matthew S. Wong, Philip Chan, Yunxuan Yang, Haojun Zhang, Mike Iza, James S. Speck, Shuji Nakamura, Steven P. Denbaars
Summary: InGaN-based red micro-size light-emitting diodes (μLEDs) are highly attractive due to their less influenced external quantum efficiency (EQE) by size effect compared to common AlInGaP-based red μLEDs. Additionally, InGaN red μLEDs exhibit robust device performance even at high temperatures up to 400K. This review discusses the progress of InGaN red μLEDs and explores novel growth methods to relax the strain and increase the growth temperature of InGaN red quantum wells.
Article
Chemistry, Multidisciplinary
Pan Yin, Ting Zhi, Tao Tao, Xiaoyan Liu
Summary: In this study, GaN-based blue micro-light-emitting diodes (mu-LEDs) with different structures were designed, and the effect of quantum well (QW) structure on modulation bandwidth was explored. It was found that trapezoidal QWs can enhance modulation bandwidth and improve carrier lifetime.
Article
Optics
Himanshu Karan, Abhijit Biswas
Summary: This study reports the optical performance of four InGaN/GaN multiple quantum well (MQW) blue LEDs with different bottom base widths, where the introduction of trapezoidal QW structure aids in reducing the piezoelectric polarization field, promoting carrier distribution uniformity, and increasing radiative recombination rate, with LED C showing the best performance.
Article
Optics
Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa
Summary: The study introduced a method for fabricating ultra-small InGaN μLEDs, successfully realizing different shapes of green μLEDs. It was found that as the size of the μLED decreases, the series resistance and turn-on voltage increase, while the light output power density and external quantum efficiency also improve.
Article
Optics
Shuyuan Zhang, Wei Liu, Jie Zhang, Hengyan Zhao, Zeyu Liu, Zhangbo Hu
Summary: The influence of the position of the InGaN layer on the electroluminescence properties of red InGaN/GaN single quantum well light-emitting diodes was numerically investigated. It was found that as the InGaN well shifts from the P-region to the N-region, the EL intensity decreases, and the spectrum red-shifts. The reduction in EL intensity is attributed to the enhanced injection efficiency of holes and weakened injection efficiency of electrons, resulting in a decrease in the total amount of carriers.
JOURNAL OF LUMINESCENCE
(2022)
Article
Materials Science, Multidisciplinary
Liwen Cheng, Xingyu Lin, Zhenwei Li, Da Yang, Jiayi Zhang, Jundi Wang, Jiarong Zhang, Yuru Jiang
Summary: InGaN LEDs with IGIT barriers have higher light output power, lower turn-on voltage, and less efficiency droop compared to LEDs with conventional GaN and InGaN barriers. These improvements are a result of the appropriately designed energy band diagram, which enhances hole injection efficiency and electron confinement.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2021)
Article
Physics, Applied
Nicola Roccato, Francesco Piva, Carlo De Santi, Matteo Buffolo, Camille Haller, Jean-Francois Carlin, Nicolas Grandjean, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Summary: The study found that the indium content in InGaN light-emitting diodes has a significant impact on defect density and degradation rate. Results indicate the important role of indium in favoring the incorporation of point defects.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Optics
Bahawal Haq, Sulakshna Kumari, Kasper Van Gasse, Jing Zhang, Agnieszka Gocalinska, Emanuele Pelucchi, Brian Corbett, Gunther Roelkens
LASER & PHOTONICS REVIEWS
(2020)
Article
Optics
Jeroen Goyvaerts, Sulakshna Kumari, Sarah Uvin, Jing Zhang, Roel Baets, Agnieszka Gocalinska, Emanuele Pelucchi, Brian Corbett, Gunther Roelkens
Article
Materials Science, Multidisciplinary
Giriprasanth Omanakuttan, Yan-Ting Sun, Carl Reuterskiold Hedlund, Carl Junesand, Richard Schatz, Sebastian Lourdudoss, Valerie Pillard, Francois Lelarge, Jack Browne, John Justice, Brian Corbett
OPTICAL MATERIALS EXPRESS
(2020)
Article
Materials Science, Multidisciplinary
Ian Mathews, David Quinn, John Justice, Agnieszka Gocalinska, Emanuele Pelucchi, Ruggero Loi, James O'Callaghan, Brian Corbett
ADVANCED MATERIALS TECHNOLOGIES
(2020)
Article
Optics
Bahawal Haq, Javad Rahimi Vaskasi, Jing Zhang, Agnieszka Gocalinska, Emanuele Pelucchi, Brian Corbett, Gunther Roelkens
Article
Acoustics
Seyedsina Hosseini, Kjeld Laursen, Amin Rashidi, Tanmay Mondal, Brian Corbett, Farshad Moradi
Summary: The study introduces a Sectored-Multiring Ultrasonic Transducer (S-MRUT) as a straightforward solution for selectively powering brain implants, avoiding the complexity of conventional phased arrays.
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
(2021)
Article
Chemistry, Multidisciplinary
Enrica E. Mura, Agnieszka M. Gocalinska, Megan O'Brien, Ruggero Loi, Gediminas Juska, Stefano T. Moroni, James O'Callaghan, Miryam Arredondo, Brian Corbett, Emanuele Pelucchi
Summary: Researchers demonstrated a 1.3 μm band laser grown by MOVPE on a GaAs substrate with a specially engineered metamorphic parabolic-graded buffer to overcome surface epitaxial dynamics and instabilities. By using a combination of AlInGaAs and InGaP alloys for cladding layers, they achieved efficient compressively strained In0.4Ga0.6As quantum wells with low lasing threshold and high slope efficiency in the active layer.
CRYSTAL GROWTH & DESIGN
(2021)
Review
Optics
Peter J. Parbrook, Brian Corbett, Jung Han, Tae-Yeon Seong, Hiroshi Amano
Summary: The article presents the principles and applications of micro-LED technology, discussing the implications of reduced LED size in necessitating mitigation strategies for nonradiative device edge damage and the potential for higher drive current densities.
LASER & PHOTONICS REVIEWS
(2021)
Article
Optics
Brendan Roycroft, Meena Baskaran, David McMahon, Brian Corbett
Summary: The study demonstrates laser power conversion using an edge-coupled waveguide configuration, achieving high power conversion efficiency. This technology can be applied to power conversion from fiber to devices and enable power-free data transmission, opening new possibilities for medical interventions and remote photonics applications.
Article
Optics
Stijn Cuyvers, Bahawal Haq, Camiel Op de Beeck, Stijn Poelman, Artur Hermans, Zheng Wang, Agnieszka Gocalinska, Emanuele Pelucchi, Brian Corbett, Gunther Roelkens, Kasper Van Gasse, Bart Kuyken
Summary: Research shows that leveraging ultra-low losses of silicon-nitride waveguides to manufacture a III-V-on-silicon-nitride integrated optical comb laser leads to superior performance, high efficiency, and low manufacturing costs.
LASER & PHOTONICS REVIEWS
(2021)
Article
Optics
Ida Izadi, Vanessa Dusend, Abdulaziz Takrouni, Noreen Nudds, Kamil Gradkowski, Peter O'Brien, Philipp Sasse, Brian Corbett
Summary: Control of heart rhythm is crucial in cases of arrhythmia. Cardiac optogenetics is a promising technique that may replace electrical stimulation, but further research on optimizing light delivery methods is necessary. A 2 x 2 blue LED optoelectronic module demonstrates high illumination homogeneity and irradiance for cardiac muscle illumination, enabling successful optogenetic pacing with reduced phototoxicity.
Editorial Material
Optics
Fatima Gunning, Brian Corbett
Summary: The use of on-chip nonlinear waveguides can convert 1.5-mu m wavelength signals into the 2-mu m region, opening up new opportunities for expanding the bandwidth of optical communications.
Proceedings Paper
Engineering, Electrical & Electronic
Jing Zhang, Clemens J. Kruckel, Bahawal Haq, Bozena Matuskova, Johanna Rimbock, Stefan Ertl, Agnieszka Gocalinska, Emanuele Pelucchi, Brian Corbett, Joris Van Campenhout, Guy Lepage, Peter Verheyen, Dries Van Thourhout, Roel Baets, Gunther Roelkens
Summary: We presented an array of C-band high-speed silicon MZI switches with integrated III-V amplifiers on the imec iSiPP50G platform using micro-transfer printing. The integrated amplifiers have 10 dB optical gain, allowing lossless switching and improved cross-talk suppression of the switches.
IEEE 72ND ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2022)
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
Zeinab Shaban, Mehrdad Saei, Brian Corbett, Zhi Li
Summary: This study presents a method of micro-transfer printing GaN-on-Si LEDs into miniature reflective cavities to enhance their forward directed optical power. The power is further increased by using polymeric lenses in the cavities. Compared to LEDs on the original substrate, a 9-fold enhancement in collected light is achieved after transfer printing. Additionally, the printed LEDs demonstrate potential applications in visible light communication.
IEEE 72ND ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2022)
(2022)
Proceedings Paper
Optics
Carlos Reyes, Brian Corbett, Brendan Roycroft
Summary: The system utilizes a fiber-based swept-source optical coherence tomography system to scan sections of ex-vivo tissue samples using a translation stage, achieving a scanning range of 5x5mm(2) with a minimum scanning step resolution of 0.5 μm.
OPTICAL COHERENCE IMAGING TECHNIQUES AND IMAGING IN SCATTERING MEDIA IV
(2021)
