Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3072352
Keywords
crystal growth; diamond; high-pressure effects; photoluminescence; plasma CVD; ultraviolet spectra; visible spectra
Categories
Funding
- NSF- EAR
- NSF-DMR
- DOE-NNSA (CDAC)
- Balzan Foundation
Ask authors/readers for more resources
Single crystals of diamond up to 18 mm in thickness have been grown by microwave plasma assisted chemical vapor deposition at gas pressures of up to 350 torr. Growth rates of up to 165 mu m/h at 300 torr at high power density have been achieved. The processes were evaluated by optical emission spectroscopy. The high-quality single-crystal diamond grown at optimized conditions was characterized by UV-visible absorption and photoluminescence spectroscopy. The measurements reveal a direct relationship between residual absorption and nitrogen content in the gas chemistry. Fabrication of high quality single-crystal diamond at higher growth rates should be possible with improved reactor design that allows still higher gas synthesis pressures.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available