Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3147190
Keywords
carrier density; doping profiles; ferromagnetic materials; indium compounds; iron; magnetic hysteresis; magnetic impurities; magnetic moments; magnetic thin films; pulsed laser deposition; semiconductor doping; semiconductor materials
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Funding
- NSFC [60776008]
- NCET [07-0527]
- RFDP [20070118001]
- NSFSX [2008011042-1]
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Room temperature ferromagnetism was observed in n-type Fe-doped In2O3 thin films deposited on c-cut sapphire substrates by pulsed laser deposition. Structure, magnetism, composition, and transport studies indicated that Fe occupied the In sites of the In2O3 lattice rather than formed any metallic Fe or other magnetic impurity phases. Magnetic moments of films were proved to be intrinsic and showed to have a strong dependence on the carrier densities, which depended on the Fe concentration and its valence state as well as oxygen pressure.
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