Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3152009
Keywords
bismuth compounds; dielectric polarisation; electric domains; epitaxial layers; ferroelasticity; ferroelectric thin films; nucleation; terbium compounds
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Funding
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [820404] Funding Source: National Science Foundation
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We have analyzed the ferroelastic and ferroelectric domain structure of high crystalline quality (001) BiFeO3 films on orthorhombic (110) TbScO3 substrates. Two domains were present in stripes separated by (010) vertical boundaries, with spontaneous polarizations in adjacent domains rotated by 109 degrees. The striped morphology was caused by nucleation of only two ferroelastic domains on the low symmetry GdFeO3-type substrate. Domain engineering through substrate symmetry is an important finding for rhombohedral ferroelectric epitaxial thin films. The stripe pattern with vertical walls may be useful for extracting domain wall contributions to magnetism and electrical transport properties of BiFeO3 materials.
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