4.6 Article

Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment

Journal

APPLIED PHYSICS LETTERS
Volume 94, Issue 26, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3167301

Keywords

atomic force microscopy; field emission; hydrogen; II-VI semiconductors; plasma materials processing; sputter deposition; wide band gap semiconductors; work function; zinc compounds

Funding

  1. National Natural Science Foundation of China [50601025, 60876031]
  2. 863 project of China [2009AA03Z305]
  3. Postgraduate Research, Innovation and Practice

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The ZnO films deposited by magnetron sputtering were treated by H/O plasma. It is found that the field emission (FE) characteristics of the ZnO film are considerably improved after H-plasma treatment and slightly deteriorated after O-plasma treatment. The improvement of FE characteristics is attributed to the reduced work function and the increased conductivity of the ZnO:H films. Conductive atomic force microscopy was employed to investigate the effect of the plasma treatment on the nanoscale conductivity of ZnO, these findings correlate well with the FE data and facilitate a clearer description of electron emission from the ZnO:H films.

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