Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3167301
Keywords
atomic force microscopy; field emission; hydrogen; II-VI semiconductors; plasma materials processing; sputter deposition; wide band gap semiconductors; work function; zinc compounds
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Funding
- National Natural Science Foundation of China [50601025, 60876031]
- 863 project of China [2009AA03Z305]
- Postgraduate Research, Innovation and Practice
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The ZnO films deposited by magnetron sputtering were treated by H/O plasma. It is found that the field emission (FE) characteristics of the ZnO film are considerably improved after H-plasma treatment and slightly deteriorated after O-plasma treatment. The improvement of FE characteristics is attributed to the reduced work function and the increased conductivity of the ZnO:H films. Conductive atomic force microscopy was employed to investigate the effect of the plasma treatment on the nanoscale conductivity of ZnO, these findings correlate well with the FE data and facilitate a clearer description of electron emission from the ZnO:H films.
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