Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3120768
Keywords
annealing; boron; electron energy loss spectra; elemental semiconductors; nanoparticles; photoemission; semiconductor doping; silicon; sputtering; X-ray photoelectron spectra
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Funding
- Illuminating Engineering Institute of Japan
- Japan Society for the Promotion of Science (JSPS) [19710098]
- Grants-in-Aid for Scientific Research [19710098] Funding Source: KAKEN
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Boron (B) doping into nanocrystalline-silicon (nc-Si) particles was achieved by cosputtering of Si chips/B chips/silica disk targets and subsequent annealing at 1100 degrees C. The average diameter of B-doped particles was less than 4.3 nm, and the content of B was about 14.3 at. %. The observation of EELS spectrum of B-K edge and x-ray photoelectron spectroscopy spectra of B 1s, and that of B local vibrational peaks and the Fano effect by micro-Raman scattering measurements clearly demonstrate that B atoms were doped and electrically activated in the particles, indicating the formation of electrically active p-type nc-Si particles.
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