Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers

Published 2009 View Full Article

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Title
Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 9, Pages 092101
Publisher
AIP Publishing
Online
2009-03-04
DOI
10.1063/1.3089231
References
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